CREE SIC MOSFET GATE DRIVER DOWNLOAD

Optimized for high-frequency power-electronics applications, including renewable-energy inverters, electric-vehicle charging systems, and three-phase industrial power supplies, the new V platform enables smaller and higher-efficiency next-generation power conversion systems at cost parity with silicon-based solutions. Existing V silicon MOSFETs have severe limitations for high-frequency switching circuits due to extremely high switching losses and poor internal body diodes. Without question, it is beyond the reach of anything currently achievable with silicon. MWC Barcelona The GSMA Mobile World Congress is the world's largest exhibition for the mobile industry, incorporating a thought-leadership conference that features prominent executives representing mobile operators, device manufacturers, technology providers, vendors a. New device performance eclipses incumbent silicon solutions, providing significant system-level performance and cost advantages in a range of high-frequency power-electronics applications.

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Cree Social Tweets by cree Tweets by Cree. Upcoming Events FEB 6. About Cree Cree is leading the LED lighting revolution and making energy-wasting traditional lighting technologies obsolete through the use of energy-efficient, mercury-free LED lighting.

Existing V silicon MOSFETs have severe limitations for high-frequency switching circuits due to extremely high switching losses and poor internal body diodes. Moreover, in addition to the industry-standard TO and TO packages, the new device is also offered in a low-impedance D2Pak-7L surface-mount package with a Kelvin connection to help minimize gate ringing. MWC Barcelona The GSMA Mobile World Congress is the world's gwte exhibition for the mobile industry, incorporating a thought-leadership conference that features prominent executives representing mobile operators, device manufacturers, technology providers, vendors a.

Register by October 18, Without question, it is beyond the reach of anything currently achievable with silicon. You must have JavaScript enabled in your browser to utilize the functionality of this website.

Cree Redefines the Discrete Power MOSFET Landscape with the Industry's First V SiC MOSFET

JavaScript seems to be disabled in your browser. This platform delivers vastly superior characteristics, thereby providing rcee designers with the potential to innovate smaller, faster, cooler, and more-efficient power solutions.

Optimized for high-frequency power-electronics applications, including renewable-energy inverters, electric-vehicle charging systems, and three-phase industrial power supplies, the new V platform enables smaller and higher-efficiency next-generation power conversion systems at sci parity with silicon-based solutions.

New device performance eclipses incumbent silicon solutions, providing significant system-level performance and cost advantages in a range of high-frequency power-electronics applications.

Please refer to www. The GSMA Mobile World Congress is the world's largest exhibition mosvet the mobile industry, incorporating a thought-leadership conference that features prominent executives representing mobile operators, device manufacturers, technology providers, vendors a.

This press release contains forward-looking statements involving risks and uncertainties, both known and unknown, that may cause actual results to differ materially from those indicated.